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Electron Irradiation of InGaAsP LEDs and InGaAs Photodetectors
Author(s): K. C. Dimiduk; P. J. O'Reilly
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Paper Abstract

The effect of 30 MeV electron irradiWon op InGaA LEDs and InGaAs photodiodes was studied. Electron fluxes ranged from 1012 e/cm2 to 1015 e/cm2. The beam profile was measured with an improved scanning wire technique. During irradiation, light output, total current, and temperature were monitored for the LEDs. Responsivity and temperature were monitored for the photodiodes. Spectral characteristics and current-voltage curves were measured before and after irradiations. Changes in photodiode dark current were observed and LED lifetime-damage constant products were computed.

Paper Details

Date Published: 4 February 1987
PDF: 13 pages
Proc. SPIE 0721, Fiber Optics in Adverse Environments III, (4 February 1987); doi: 10.1117/12.937622
Show Author Affiliations
K. C. Dimiduk, Naval Postgraduate School (United States)
P. J. O'Reilly, Naval Postgraduate School (United States)

Published in SPIE Proceedings Vol. 0721:
Fiber Optics in Adverse Environments III
Roger A. Greenwell, Editor(s)

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