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Proceedings Paper

Reliability Considerations Of Si And GaAs Active Components In A Radiation Environment
Author(s): Rama S Singh; Wilford D. Raburn
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Paper Abstract

The performance of silicon (Si) and gallium arsenide (GaAs) active components operating in a radiation environment is discussed. These components include diode detectors, Si MOSFETS and GaAs MESFETS. The radiation environments considered include total dose gamma, high dose rate gamma, high energy heavy particles and neutrons. The total dose effect of charge trapping and interface state generation in the Silicon dioxide due to total dose gamma is discussed. The large photocurrents due either to high dose rate gamma or high energy heavy particles are discussed. Some of the process optimizations used to enhance the radiation immunity in Si technology and their relevance to a better and more reliable fiber optic system are presented.

Paper Details

Date Published: 23 February 1987
PDF: 9 pages
Proc. SPIE 0717, Reliability Considerations in Fiber Optic Applications, (23 February 1987); doi: 10.1117/12.937483
Show Author Affiliations
Rama S Singh, Martin Marietta Orlando Aerospace (United States)
Wilford D. Raburn, Martin Marietta Orlando Aerospace (United States)


Published in SPIE Proceedings Vol. 0717:
Reliability Considerations in Fiber Optic Applications
Dilip K. Paul, Editor(s)

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