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Proceedings Paper

A Gaas 8:1 Multiplexer And 1:8 Demultiplexer Chip Set For High-Speed Transmission Of Television And Digital Data
Author(s): M. Kane; W McGinn; R Huq; D C Fowlis; J Herman
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Paper Abstract

The inherent performance advantages of GaAs have been extensively demonstrated and make it very attractive as a semiconductor material for the fabrication of high-speed digital ICs. Its high electron mobility and high peak electron drift velocity qualify GaAs as the material for developing future high-speed integrated circuits. In addition to its electron transport properties, GaAs has an intrinsic carrier concentration that is low enough to yield semi-insulating substrates, reducing device interconnect capacitance. Recent advances in processing and circuit technology have made possible the fabrication of medium-scale integration ICs with production-oriented repeatability.

Paper Details

Date Published: 23 February 1987
PDF: 9 pages
Proc. SPIE 0716, High Frequency Optical Communications, (23 February 1987); doi: 10.1117/12.937467
Show Author Affiliations
M. Kane, Microwave Semiconductor Corp. (United States)
W McGinn, Microwave Semiconductor Corp (United States)
R Huq, Microwave Semiconductor Corp, (United States)
D C Fowlis, Microwave Semiconductor Corp, (United States)
J Herman, Microwave Semiconductor Corp (United States)

Published in SPIE Proceedings Vol. 0716:
High Frequency Optical Communications
O. Glenn Ramer; Paul Sierak, Editor(s)

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