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Proceedings Paper

Development of Ion-Implantation Confined, Shallow Mesa Stripe (Pn,Sn)Te/Pb(Te,Se) DH Laser Diodes
Author(s): Clifton G. Fonstad; Austin Harton; Yong-Ning Jiang; Howard Appelman
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Paper Abstract

Preliminary results of a program to develop ion implantation confined, shallow mesa stripe (Pb,Sn)Te laser diodes are presented. The practicality of using a shallow mesa stripe to produce single mode laser output and to increase the single mode tuning range are demonstrated. The first results of p-type ion implantation in the lead-tin salts are also reported. It is shown that sodium and lithium both can be used to convert n-type Pb(Te,Se) to p-type. The implant and anneal procedures are described, and electrical characteristics of Li-implanted layers are presented.

Paper Details

Date Published: 26 November 1983
PDF: 5 pages
Proc. SPIE 0438, Tunable Diode Laser Development and Spectroscopy Applications, (26 November 1983); doi: 10.1117/12.937424
Show Author Affiliations
Clifton G. Fonstad, Massachusetts Institute of Technology (United States)
Austin Harton, Massachusetts Institute of Technology (United States)
Yong-Ning Jiang, Massachusetts Institute of Technology (United States)
Howard Appelman, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 0438:
Tunable Diode Laser Development and Spectroscopy Applications
Chiwoei Wayne Lo, Editor(s)

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