Share Email Print
cover

Proceedings Paper

Lasing Characteristics Of PbSnSeTe-PbSeTe Lattice-Matched Double Heterostructure Laser Diodes
Author(s): Yoshiji Horikoshi
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Low threshold 6 - 15 m range lead salt diode lasers have been fabricated from closely lattice-matched PbSnSeTe-PbSeTe double-heterostructure layers grown on PbSnTe or PbTe substrates by liquid phase epitaxy. Temperature dependence of threshold current density and injected carrier lifetimes have been measured for variously doped PbSnSeTe active region lasers. Very low threshold current densities at low temperatures were obtained for compensated active region lasers. For 1 Ltm thick Bi-Tl doped active region lasers, the threshold current densities of 40 - 50 A/cm2 and 200 -250 A/cm2 at 4.2 K and 77 K, respectively, were very reproducibly obtained. The lowest observed threshold was 21 A/cm2 at 4.2 K. These results were used to discuss the factors determining the threshold current density and the highest operating temperatures.

Paper Details

Date Published: 26 November 1983
PDF: 8 pages
Proc. SPIE 0438, Tunable Diode Laser Development and Spectroscopy Applications, (26 November 1983); doi: 10.1117/12.937423
Show Author Affiliations
Yoshiji Horikoshi, Nippon Telegraph and Telephone Public Corporation (Japan)


Published in SPIE Proceedings Vol. 0438:
Tunable Diode Laser Development and Spectroscopy Applications
Chiwoei Wayne Lo, Editor(s)

© SPIE. Terms of Use
Back to Top