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Proceedings Paper

Heterojunction Stripe Geometry Lead Salt Diode Lasers Grown By Molecular Beam Epitaxy
Author(s): Dale L. Partin
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Paper Abstract

Lead-rare earth-chalcogenide diode lasers have been grown by molecular beam epitaxy. Emission wavelengths shorter than 5-6 μm have been obtained from lead-europium-selenide-telluride (pb1-xEuxSe yTe1-y) double heterojunction diode lasers grown lattice-matched to PbTe substrates. Mesa diodes with :65 μm wide tripes have been fabricated which have a wide range of single longitudinal mode emission at up to ,r1 mW/facet output power. These diodes have operated at up to 147 K CW, which is the highest CW operating temperature ever achieved with lead-chalcogenide diode lasers to our knowledge. The wavelength coverage of the PbTe system has so far been extended to 4.06 μm CW. Longer wavelength coverage is obtained from double heterojunction diode lasers with Pb1-ySnyTe active regions lattice-matched to (Pbi1-ySny)1-xYbxTe confinement layers. In preliminary studies of diode wYth x = 0.034, y = 0.14, the CW emission wavelength varied from 10.7 μm (at 10 K) to 7.1 μm (at 128 K).

Paper Details

Date Published: 26 November 1983
PDF: 4 pages
Proc. SPIE 0438, Tunable Diode Laser Development and Spectroscopy Applications, (26 November 1983); doi: 10.1117/12.937421
Show Author Affiliations
Dale L. Partin, General Motors Research Laboratories (United States)

Published in SPIE Proceedings Vol. 0438:
Tunable Diode Laser Development and Spectroscopy Applications
Chiwoei Wayne Lo, Editor(s)

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