Share Email Print
cover

Proceedings Paper

Studies Of Excimer Laser Etching Mechanism Using Laser Induced Fluorescence Measurements
Author(s): R. W. Dreyfus; Roger Kelly; R. E. Walkup; R. Srinivasan
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Bombarding solid surfaces with intense 248 nm KrF* or 193 nm ArF* excimer lasers leads to rapid etching. The ejected material consists of atoms, diatomics and larger clusters. Using laser fluences near threshold so as to minimize perturbations due to gas-phase collisions and to laser-produced plasma, the energy distributions of the first two types of species were measured by laser-induced fluorescence (LIF). The species detected were Al, A10, C2 and CN. The results show that for a metallic-like material (graphite) the energies agree with a purely thermal mechanism for the vaporization. In distinct contrast to this, insulating materials (sapphire and polymers) display nonthermal energy distributions and point to a photochemical (bond-breaking) mechanism. Understanding these mechanisms is of interest to microelectronic circuit production techniques, to optical damage prevention, and to laser surgery.

Paper Details

Date Published: 11 March 1987
PDF: 9 pages
Proc. SPIE 0710, Excimer Lasers and Optics, (11 March 1987); doi: 10.1117/12.937296
Show Author Affiliations
R. W. Dreyfus, IBM T.J. Watson Research Center (United States)
Roger Kelly, IBM T.J. Watson Research Center (United States)
R. E. Walkup, IBM T.J. Watson Research Center (United States)
R. Srinivasan, IBM T.J. Watson Research Center (United States)


Published in SPIE Proceedings Vol. 0710:
Excimer Lasers and Optics
Ting-Shan Luk, Editor(s)

© SPIE. Terms of Use
Back to Top