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Proceedings Paper

X-Ray Diffraction of CdTe Epitaxial Layers on GaAs Substrates as a Function of Temperature
Author(s): R. D. Horning; J. -L. Staudenmann; U. Bonse; D. K. Arch; J. L. Schmit
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Paper Abstract

A (0,0,1) epitaxial layer of CdTe on a (0,0,1) GaAs substrate has been studied as a function of temperature by x-ray diffraction. Lattice parameters and integrated intensities of Bragg reflections were measured between 10 K and 360 K using a wavelength of 0.7093 Å (Mo Kα). The lattice parameters were measured parallel and perpendicular to the interface. The changes of the integrated intensities with temperature give information about the thermal vibrations. Average Debye temperatures for the substrate and epilayer are 232±2 K and 142±2 K, respectively. These data are compared with data from CdTe and GaAs single crystals in order to understand how strain is propagated and/or relieved in the composite system.

Paper Details

Date Published: 12 August 1986
PDF: 6 pages
Proc. SPIE 0690, X-Rays in Materials Analysis: Novel Applications and Recent Developments, (12 August 1986); doi: 10.1117/12.936609
Show Author Affiliations
R. D. Horning, Iowa State University (United States)
J. -L. Staudenmann, Iowa State University (United States)
U. Bonse, Universitaet Dortmund, Experimentell Physik (Germany)
D. K. Arch, Honeywell Physical Sciences Center (United States)
J. L. Schmit, Honeywell Physical Sciences Center (United States)

Published in SPIE Proceedings Vol. 0690:
X-Rays in Materials Analysis: Novel Applications and Recent Developments
Thomas W. Rusch, Editor(s)

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