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Proceedings Paper

EXAFS Measurements Of Ion-Implanted Amorphous Surface Layers
Author(s): C. E. Bouldin; R. A. Forman; M. I. Bell; E. P. Donovan; G. K. Hubler
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Paper Abstract

EXAFS measurements of ion-damaged amorphous Ge (a-Ge) show that low temperature annealing causes a structural relaxation in the as-implanted a-Ge. It is found that there is a sharpening of the first shell in the radial distribution but no change occurs in the first-shell distance or coordination number. No higher shells in the radial distribution are observed, either before or after annealing, indicating that these shells remain highly disordered. The observed structural relaxation is an amorphous-amorphous transition; no nucleation of microcrystals takes place. EXAFS measurements are made using conversion electron detection (CEEXAFS), which is essentially total electron yield detection in ambient conditions, allowing the EXAFS measurements to be near-surface sensitive with a sampling depth of 600 to 800 Å.

Paper Details

Date Published: 12 August 1986
PDF: 7 pages
Proc. SPIE 0690, X-Rays in Materials Analysis: Novel Applications and Recent Developments, (12 August 1986); doi: 10.1117/12.936597
Show Author Affiliations
C. E. Bouldin, National Bureau of Standards (United States)
R. A. Forman, National Bureau of Standards (United States)
M. I. Bell, National Bureau of Standards (United States)
E. P. Donovan, Naval Research Laboratory (United States)
G. K. Hubler, Naval Research Laboratory (United States)


Published in SPIE Proceedings Vol. 0690:
X-Rays in Materials Analysis: Novel Applications and Recent Developments
Thomas W. Rusch, Editor(s)

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