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Proceedings Paper

Indium Arsenide Photovoltaic Detectors, Advances in Fabrication and Performance
Author(s): Mark E. Greiner; Charles J. Martin
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Paper Abstract

Recent advances in detector fabrication techniques at Cincinnati Electronics Corporation have made possible high quality Indium Arsenide (InAs) photovoltaic detectors. InAs detectors are an alternative to Indium Antimonide (InSb) detectors when the wavelength of interest is less than 3.5 microns. InAs photovoltaic (PV) detectors offer the flexibility of thermo-electric cooling available with photoconductive detectors such as lead sulfide without sacrificing speed. Recent advances in detector fabrication techniques have made off-mesa bonding possible. These advances will be discussed below as well as their effect on detector performance. Responsivity and noise data at various operating temperatures will be presented as well.

Paper Details

Date Published: 6 November 1986
PDF: 8 pages
Proc. SPIE 0686, Infrared Detectors, Sensors, and Focal Plane Arrays, (6 November 1986); doi: 10.1117/12.936523
Show Author Affiliations
Mark E. Greiner, Cincinnati Electronics Corporation (United States)
Charles J. Martin, Cincinnati Electronics Corporation (United States)

Published in SPIE Proceedings Vol. 0686:
Infrared Detectors, Sensors, and Focal Plane Arrays
Hideyoshi Nakamura, Editor(s)

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