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Proceedings Paper

Preparation And Characterization Of ZnSiP[sub]2[/sub], ZnGeP[sub]2[/sub] and ZnGeP[sub]1.8[/sub]As[sub].2[/sub] Single Crystals
Author(s): He-Sheng Shen; Guang-Qing Yao; Robert Kershaw; Kirby Dwight; Aaron Wold
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Paper Abstract

Single crystals of ZnSiP2, ZnGeP2 and ZnGeP1.8As.2 have been grown by several techniques and their electronic and optical properties compared. For ZnSiP2 there are marked absorption bands at 10 and 11.5 μm, and at 13 μm for ZnGeP2. Upon substitution of 10 mole percent of arsenic for phosphorus , the latter band is red-shifted by 0.3 μm. This composition represents the limit of substitution of arsenic for phosphorus in this structure.

Paper Details

Date Published: 19 December 1986
PDF: 6 pages
Proc. SPIE 0683, Infrared and Optical Transmitting Materials, (19 December 1986); doi: 10.1117/12.936426
Show Author Affiliations
He-Sheng Shen, Brown University (United States)
Guang-Qing Yao, Brown University (United States)
Robert Kershaw, Brown University (United States)
Kirby Dwight, Brown University (United States)
Aaron Wold, Consultant (United States)

Published in SPIE Proceedings Vol. 0683:
Infrared and Optical Transmitting Materials
Robert W. Schwartz, Editor(s)

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