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Proceedings Paper

Recent Developments In Sapphire Growth By Heat Exchanger Method (HEM)
Author(s): C. P. Khattak; A. N. Scoville; F. Schmid
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Paper Abstract

Large diameter, sapphire crystals are grown using the heat exchanger method (HEM). In order to address current applications of sapphire 30 kg, 25 cm diameter boules have been put into production. The feasibility of growth of (0001) orientation boules has been demonstrated. This allows for larger sapphire components for zero birefringence optics applications. The HEM has been adapted as an "investment casting" technique for growing complicated sapphire components directly from the melt.

Paper Details

Date Published: 19 December 1986
PDF: 4 pages
Proc. SPIE 0683, Infrared and Optical Transmitting Materials, (19 December 1986); doi: 10.1117/12.936413
Show Author Affiliations
C. P. Khattak, Crystal Systems, Inc. (United States)
A. N. Scoville, Crystal Systems, Inc. (United States)
F. Schmid, Crystal Systems, Inc. (United States)


Published in SPIE Proceedings Vol. 0683:
Infrared and Optical Transmitting Materials
Robert W. Schwartz, Editor(s)

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