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Proceedings Paper

Millimeter-Wave InP Gunn Devices
Author(s): J. D. Crowley
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Paper Abstract

InP Gunn devices are playing an important role in the development of millimeter-wave components as active devices which perform well throughout the millimeter-wave range. Efficient CW oscillators have been developed covering the 35-140 GHz range. InP Gunn diodes are also being used extensively for low noise and medium power amplification. Amplifiers have been constructed for operation up to 95 GHz.

Paper Details

Date Published: 14 October 1983
PDF: 5 pages
Proc. SPIE 0423, Millimeter Wave Technology II, (14 October 1983); doi: 10.1117/12.936160
Show Author Affiliations
J. D. Crowley, Varian Associates, Inc. (United States)


Published in SPIE Proceedings Vol. 0423:
Millimeter Wave Technology II
James C. Wiltse, Editor(s)

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