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Proceedings Paper

Frontside-Or Backside-Illuminated HgCdTe Detectors: A New Structure For Infrared Charge-Coupled Device (IRCCD) Focal Plane Arrays
Author(s): J. Ameurlaine; J. Fleury; A. Gauthier; J. Maille
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Paper Abstract

The different types of state-of-the-art hybrid structures for photovoltaic focal plane arrays are subject to inherent fabrication problems. The island technology used for front-side illumination presents problems caused by the thinning and bonding of the photodetector material and by the forming of the connections. Devices for backside illumination are difficult to produce and very much dependent on the quality of the CdTe substrate. A new device which consists of a symmetrical front-and-back structure permits detection to take place on one face and electrical connection on the other. Its fabrication draws on classical HgCdTe array fabrication processes. This new symmetrical two-face structure yields diodes whose characteristics and manufacturing yields are entirely comparable to those obtained for conventional HgCdTe arrays.

Paper Details

Date Published: 30 November 1983
PDF: 8 pages
Proc. SPIE 0409, Technical Issues in Infrared Detectors and Arrays, (30 November 1983); doi: 10.1117/12.935742
Show Author Affiliations
J. Ameurlaine, Societe Anonyme de Telecommunications (France)
J. Fleury, Societe Anonyme de Telecommunications (France)
A. Gauthier, Societe Anonyme de Telecommunications (France)
J. Maille, Societe Anonyme de Telecommunications (France)


Published in SPIE Proceedings Vol. 0409:
Technical Issues in Infrared Detectors and Arrays
Esther Krikorian, Editor(s)

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