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Proceedings Paper

Development Status Of Silicon IR detectors
Author(s): Nathan Sclar
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Paper Abstract

The present performance status of silicon IR detectors, including spectral response, detectivity and operational temperature for use in the 2-2.5, 3-5 and 8-14 pm principal windows of the atmosphere, are summarized and discussed. In general, all of the detectors are background radiation noise limited below some temperature which is a function of the background flux density. This temperature is tabulated for the detectors for a background provided by a 30° field of view of the 300K background. These temperatures are in general lower than required for equivalent intrinsic detectors, but the special properties of silicon when they are mated to CCDs, particularly for the longer wavelengths, including the electrical impedance and the character of the noise may offset the temperature advantage of the intrinsics when used in imaging arrays.

Paper Details

Date Published: 30 November 1983
PDF: 9 pages
Proc. SPIE 0409, Technical Issues in Infrared Detectors and Arrays, (30 November 1983); doi: 10.1117/12.935736
Show Author Affiliations
Nathan Sclar, Rockwell International Science Center (United States)

Published in SPIE Proceedings Vol. 0409:
Technical Issues in Infrared Detectors and Arrays
Esther Krikorian, Editor(s)

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