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Proceedings Paper

The Anodic Oxide of Hg[sub]1-x[/sub]Cd[sub]x[/sub]Te: THe Composition And Reaction With The Substrate
Author(s): G. D. Davis; S. P. Buchner; J . S. Ahearn; N. E . Byer
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Paper Abstract

The chemistry of the anodic oxide of Hgl-xCdxTe is reviewed. The oxide is generally believed to contain little Hg and primarily consist of CdTeO3 with smaller amounts of HgTe03, CdTe205, HgTe205, or Te02. Consistent with the weakening Hg-Te bond strength for lower x value material, a severely defective interface between the oxide and the substrate is reported for Hg0.8Cd0.2Te, but not for Hg0.7Cd0.3Te. The detailed nature of these defects, however, remains open to debate. Models include a Hg-depleted layer in the semiconductor and an inhomogeneous oxide layer near the interface.

Paper Details

Date Published: 30 November 1983
PDF: 8 pages
Proc. SPIE 0409, Technical Issues in Infrared Detectors and Arrays, (30 November 1983); doi: 10.1117/12.935734
Show Author Affiliations
G. D. Davis, Martin Marietta Laboratories (United States)
S. P. Buchner, Martin Marietta Laboratories (United States)
J . S. Ahearn, Martin Marietta Laboratories (United States)
N. E . Byer, Martin Marietta Laboratories (United States)


Published in SPIE Proceedings Vol. 0409:
Technical Issues in Infrared Detectors and Arrays
Esther Krikorian, Editor(s)

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