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Proceedings Paper

Calculation of Misfit Dislocations and Dangling Bond Densities in Abrupt Hg1-xCdxTe Heterojunctions
Author(s): Richard B. Schoolar
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Paper Abstract

Based on the classical theory of epitaxial crystal growth, the misfit dislocations and dangling bond densities of abrupt (111) Hg l- xCdxTe heterojunctions have been calculated. It is assumed that the misfit between layers with compositions xi and x2 is accommodated by edge dislocations lying along the <111> directions. This is in agreement with recent experiments on the growth of Hgl-xCdxTe epitaxial layers. For the case where (x2 -x1) >0.1 the dangling bond density is on the order of 1011cm-2. Such large dangling bond densities may produce high interface recombination velocities or band-bending at the interface.

Paper Details

Date Published: 30 November 1983
PDF: 3 pages
Proc. SPIE 0409, Technical Issues in Infrared Detectors and Arrays, (30 November 1983); doi: 10.1117/12.935733
Show Author Affiliations
Richard B. Schoolar, The Aerospace Corporation (United States)

Published in SPIE Proceedings Vol. 0409:
Technical Issues in Infrared Detectors and Arrays
Esther Krikorian, Editor(s)

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