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Proceedings Paper

Molecular Beam Epitaxial Growth And Characterization Of Hg1_xCdxTe
Author(s): C. J. Summers; E. L. Meeks; N. W. Cox
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Paper Abstract

A molecular beam epitaxy (MBE) system designed for the growth of Hg l-xCdxTe alloys is described. The system is equipped with both binary (CdTe) and elemental Hg, Cd, and Te sources and has been used to grow epitaxial layers of CdTe and Hg 1-xCdxTe with x-value between 0.9 and 0.5 on (111) orientated CdTe substrates. The growth of CdTe on (100) orientated GaAs and 1nP substrates is also reported.

Paper Details

Date Published: 30 November 1983
PDF: 7 pages
Proc. SPIE 0409, Technical Issues in Infrared Detectors and Arrays, (30 November 1983); doi: 10.1117/12.935728
Show Author Affiliations
C. J. Summers, Georgia Institute of Technology (United States)
E. L. Meeks, Georgia Institute of Technology (United States)
N. W. Cox, Georgia Institute of Technology (United States)


Published in SPIE Proceedings Vol. 0409:
Technical Issues in Infrared Detectors and Arrays
Esther Krikorian, Editor(s)

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