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Proceedings Paper

Integration of InGaAsP/InP Laser With Field Effect Transistor (FET)
Author(s): P. C. Chen; H. D. Law; E. Rezek; C. H. Lee; A. Carpenter
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Paper Abstract

Optoelectronic integration of an InGaAsP/InP laser is discussed. Low threshold buried heterostructure lasers on semi-insulating InP substrate and junction FETs compatible with integration are developed.

Paper Details

Date Published: 30 November 1983
PDF: 4 pages
Proc. SPIE 0408, Integrated Optics III, (30 November 1983); doi: 10.1117/12.935719
Show Author Affiliations
P. C. Chen, TRW Technology Research Center (United States)
H. D. Law, TRW Technology Research Center (United States)
E. Rezek, TRW Technology Research Center (United States)
C. H. Lee, TRW Technology Research Center (United States)
A. Carpenter, TRW Technology Research Center (United States)


Published in SPIE Proceedings Vol. 0408:
Integrated Optics III
Dennis G. Hall; Lynn D. Hutcheson, Editor(s)

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