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Proceedings Paper

Correlation Between Deposition Parameters And Performance Of Sputtered Amorphous Silicon Solar Cells
Author(s): T. D. Moustakas
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Paper Abstract

This paper describes correlations between deposition parameters and photovoltaic properties of intrinsic amorphous silicon films produced by RF sputtering. We present data showing strong dependence between photovoltaic properties and structural and compositional inhomogeneity of the films. Studies on films produced at different hydrogen concentrations show that the ones with larger optical gaps have better photovoltaic potential. Small concentration of dopant impurities in the intrinsic films has significant effect on their photovoltaic properties. These optimization studies lead to intrinsic material, which when incorporated in a P-I-N solar cell generates external currents up to 13 mA/cm2 and open circuit voltages of between 0.85 to 0.95 volts.

Paper Details

Date Published: 8 September 1983
PDF: 9 pages
Proc. SPIE 0407, Photovoltaics for Solar Energy Applications II, (8 September 1983); doi: 10.1117/12.935688
Show Author Affiliations
T. D. Moustakas, Exxon Research and Engineering Company (United States)


Published in SPIE Proceedings Vol. 0407:
Photovoltaics for Solar Energy Applications II
David Adler, Editor(s)

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