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Proceedings Paper

Properties Of Hydrogenated Amorphous Silicon Prepared By Chemical Vapor Deposition From Higher Silanes
Author(s): A. E. Delahoy
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Paper Abstract

A review is given of the optical, electronic and device properties of hydrogenated amorphous silicon (a-Si:H) prepared by chemical vapor deposition (CVD) from higher order silanes. Prepared in this way, a-Si:H possesses a smaller energy gap than its counterpart prepared by glow discharge (GD) techniques, and thus is a potentially interesting material for photovoltaic solar energy conversion. Topics discussed are the deposition mechanism, hydrogen concentration and bonding, the optical energy gap, dark conductivity and photo-conductivity, sub-bandgap absorption, the effect of hydrogen plasma treatment, doping properties, gap states, and photovoltaic devices.

Paper Details

Date Published: 8 September 1983
PDF: 9 pages
Proc. SPIE 0407, Photovoltaics for Solar Energy Applications II, (8 September 1983); doi: 10.1117/12.935687
Show Author Affiliations
A. E. Delahoy, Chronar Corporation (United States)


Published in SPIE Proceedings Vol. 0407:
Photovoltaics for Solar Energy Applications II
David Adler, Editor(s)

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