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Proceedings Paper

CW CO[sub]2 [/sub]Laser Annealing
Author(s): L. Nanu; E. Cojocaru; I. N. Mihailescu; L. C. Nistor; V. Teodorescu
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Paper Abstract

The paper reports on a numerical analysis of the thermal phenomena during cw CO2 laser annealing of implanted silicon. At the surface of the sample the nonlinear heat equation was solved together with diffusion equation for free-carriers density. The results are in a quite good agreement with the reported experimental results.

Paper Details

Date Published: 26 October 1983
PDF: 5 pages
Proc. SPIE 0398, Industrial Applications of Laser Technology, (26 October 1983); doi: 10.1117/12.935408
Show Author Affiliations
L. Nanu, Central Institute of Physics (Romania)
E. Cojocaru, Central Institute of Physics (Romania)
I. N. Mihailescu, Central Institute of Physics (Romania)
L. C. Nistor, Central Institute of Physics (Romania)
V. Teodorescu, Central Institute of Physics (Romania)


Published in SPIE Proceedings Vol. 0398:
Industrial Applications of Laser Technology
William F. Fagan, Editor(s)

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