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Proceedings Paper

High-Density Schottky Barrier IRCCD Sensors For Remote Sensing Applications
Author(s): H. Elabd; J. R. Tower; B. M. McCarthy
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Paper Abstract

A palladium silicide (Pd2Si) Schottky barrier sensor for satellite push-broom multispectral imaging in the 1-3.5 μm short wavelength infrared (SWIR) is being developed. The SWIR sensor will utilize Schottky barrier infrared charge-coupled device (IRCCD) technology to realize dual-band integrated circuits with two linear arrays of 512 detectors each. The monolithic, two-color devices will have 30-μm center-to-center detector spacing and an 80 to 90% fill-factor. These integrated circuits will be suitable for chip-to-chip abutment, thus providing the capability to produce large, multiple-chip focal planes with contiguous, in-line detectors. To date, monolithic 32-x-64 and 64-x-128 palladium silicide interline transfer IRCCDs have been developed. These silicon imagers exhibit a low response nonuniformity of typically 0.2 to 1.6% rms. Spectral response measurements of Pd2Si p-type Si devices yield quantum efficiencies of 7.9% at 1.25 μm, 5.6% at 1.65 μm, and 2.2% at 2.22 μm. Improvement in quantum efficiency is expected by optimizing the different structural parameters of the Pd2Si detectors. The dark current level of Pd2Si detectors permits radiometric operation at 120-125K with a measured dark current of 2 nA/cm2 (120K). This operating temperature is complemented by a low power dissipation of 18 μW per detector for nominal operation of a push-broom 2-x-512 device. These operational parameters will permit the realization of satellite-borne, passively cooled, dual-band focal planes with thousands of detector elements. It has been shown that the performance of the technology will permit the dual-band sensor to meet the noise-equivalent-delta reflectivity (NEAp) requirements for accurate classification of earth resources features.

Paper Details

Date Published: 30 November 1983
PDF: 10 pages
Proc. SPIE 0395, Advanced Infrared Sensor Technology, (30 November 1983); doi: 10.1117/12.935187
Show Author Affiliations
H. Elabd, RCA Laboratories (United States)
J. R. Tower, RCA Advanced Technology Laboratories (United States)
B. M. McCarthy, RCA Advanced Technology Laboratories (United States)


Published in SPIE Proceedings Vol. 0395:
Advanced Infrared Sensor Technology
Jean Besson, Editor(s)

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