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Proceedings Paper

InSb Infrared Arrays With Si - CCD Readout
Author(s): Bernard Munier; Marc Arques; Jacques Portmann; Jean-Philippe Reboul
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Paper Abstract

We present in this paper the performance of a linear array of 30 InSb 3-5 μm detectors multiplexed by a silicon CCD. The InSb detectors are photodiodes built on a p type InSb bulk substrate. The detector technololgy has been specially adapted for multiplexing detectors by n channel CCD's. The InSb detectors have a near-BLIP performance, are highly uniform and do not show any 1/f noise when reverse biased. The InSb array has been multiplexed in the focal plane by a n - channel CCD. The mean detectivity measured at the CCD output is 1.6 x 1011 cm W-1 Hz1/2. The photoresponse nonuniformity is smaller than ± 5 % and the dynamic range is 75 dB. The limiting factors of these kinds of arrays will be discussed.

Paper Details

Date Published: 30 November 1983
PDF: 5 pages
Proc. SPIE 0395, Advanced Infrared Sensor Technology, (30 November 1983); doi: 10.1117/12.935182
Show Author Affiliations
Bernard Munier, THOMSON-CSF Division Tubes Electroniques (France)
Marc Arques, THOMSON-CSF Division Tubes Electroniques (France)
Jacques Portmann, THOMSON-CSF Division Tubes Electroniques (France)
Jean-Philippe Reboul, THOMSON-CSF Division Tubes Electroniques (France)


Published in SPIE Proceedings Vol. 0395:
Advanced Infrared Sensor Technology
Jean Besson, Editor(s)

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