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Proceedings Paper

Cd Hg Te (1.3 µm - 1.55 µm) Avalanche Photodiode
Author(s): J. Meslage; G. Pichard; M. Fragnon; M. Royer; M. Nguyen Duy; C. Boisrobert; D. Morvan
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Paper Abstract

The particular Cd0.7 Hg0.3Te band structure:almost equality of band gap and spin orbit splitting, provides good ionization properties to this alloy : a high ionization coefficients ratio is expected. The devices elaboration is made by planar technology. A N+/N/P+ structure is achieved by ions implantation followed by a diffusion process. A diffused guard ring allows to avoid surface and junction edge effects. The I (V) characteristic shows a breakdown voltage (VB) of about 100 V. The dark current at 0.95 VB, amounts 100nA.Photodiodes sensitivity is typiclly of 0.7. A/W when M=1.Multiplication coefficients as high as 40 have been measured, the photoresponse spatial homogeneity in gain mode has been also controlled with a lOμm size spot : no microplasma effect have been observed. Photodetectors sensitivity, measured at 500 MHz, remains identical in avalanche operating mode. Good linearity is obtained when plotting P-N schottky noise versus light intensity No excess noise was observed. The study of the avalanche photodiode noise, synchronous with 1.3. μm DEL emission, at 30 MHz with a 1 MHz bandwith has been carried out in relation to the multiplication factor, and has led to an estimation of the ionization coefficient ratio.

Paper Details

Date Published: 30 November 1983
PDF: 7 pages
Proc. SPIE 0395, Advanced Infrared Sensor Technology, (30 November 1983); doi: 10.1117/12.935176
Show Author Affiliations
J. Meslage, SAT (France)
G. Pichard, SAT (France)
M. Fragnon, SAT (France)
M. Royer, SAT (France)
M. Nguyen Duy, SAT (France)
C. Boisrobert, CNET/I.C.M./TOM (France)
D. Morvan, CNET/I.C.M./TOM (France)


Published in SPIE Proceedings Vol. 0395:
Advanced Infrared Sensor Technology
Jean Besson, Editor(s)

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