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Proceedings Paper

Ge And InGaAs Avalanche Photodiodes For Long Wavelength Optical Communication Use
Author(s): Katsuhiko Nishida; Hideo Iwasaki; Kenko Taguchi
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Paper Abstract

Device structure parameters governing APD performances are discussed and optimum conditions are elucidated for both Ge APDs and heterostructure InGaAs APDs. Two types of Ge APDs with p+n and p+nn- structures were developed for use in 1.0 ~ 1.55 um wavelength. The dark current of Ge APDs was reduced to improve detection sensitivity by newly developed processes. Heterojunction InGaAs APDs were developed, which are formed in a top window type planar structure with an InP cap. Avalanche gain of about 30 and low dark current density of about 2 x 10-5A/cm2 at 0.9VB were obtained. High bit-rate operation was achieved at 450Mb/s.

Paper Details

Date Published: 30 November 1983
PDF: 7 pages
Proc. SPIE 0395, Advanced Infrared Sensor Technology, (30 November 1983); doi: 10.1117/12.935175
Show Author Affiliations
Katsuhiko Nishida, NEC Corporation (Japan)
Hideo Iwasaki, NEC Corporation (Japan)
Kenko Taguchi, NEC Corporation (Japan)


Published in SPIE Proceedings Vol. 0395:
Advanced Infrared Sensor Technology
Jean Besson, Editor(s)

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