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Proceedings Paper

Photodetectors For Long Wavelength Optical Fiber Communication Systems
Author(s): Hiroshi Kanbe
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Paper Abstract

Recent developments on a germanium avalanche photodiode (Ge-APD) and an InP/InGaAs-APD with a planar structure are described. The Ge-APD with a wide depletion layer had improved quantum efficiency and response speed at 1.55 μm wavelength. Transmission experiment using the Ge-APD showed 2 to 4 dB improvement in the minimum average received power yielding 10-9 error rate. A planar InP/InGaAs-APD with separated multiplication and absorption regions was fabricated by using a new technique for forming a guard ring. The guard ring junction was realized by Cd diffusion through a thin Si02 film. A low surface impurity density and linearly-graded junction were obtained by tie diffusion technique. A uniform multiplication gain of over 30 was achieved in the sensitive area.

Paper Details

Date Published: 30 November 1983
PDF: 7 pages
Proc. SPIE 0395, Advanced Infrared Sensor Technology, (30 November 1983); doi: 10.1117/12.935174
Show Author Affiliations
Hiroshi Kanbe, Nippon Telegraph and Telephone Public Corporation (Japan)


Published in SPIE Proceedings Vol. 0395:
Advanced Infrared Sensor Technology
Jean Besson, Editor(s)

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