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Proceedings Paper

Optic And X-Ray Lithographies In 1990's
Author(s): J. P. Lazzari; P. Parrens
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Paper Abstract

Among various submicron lithography techniques, optical and X-rays are potentially opened for IC production in the future. The purpose of this paper is to foresee the applications of these two technics in 1990's. In the first part of this study, we define for X-rays the key points and natural limitations for various source approaches (conventional sources, gas pinch, storage ring). Then, we analyse the possibilities offered by X-ray lithography, assuming that all technological problems are solved. We suppose that every source is existing and reliable, that masks are stable and without defects, and finally that resists with good sensitivity to contrast ratio exist. Based upon experimental results, we foresee the performances of optical lithography. A second part compares the annlication of X-ray and optical lithogranhies, in terms of financial and nerformance analyses, in regard to the evolution of design rules and dimension reduction. The conclusion will try to predict the application of these two techniques.

Paper Details

Date Published: 7 November 1983
PDF: 8 pages
Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); doi: 10.1117/12.935113
Show Author Affiliations
J. P. Lazzari, LETI Commissariat a l'Energie Atomique (France)
P. Parrens, LETI Commissariat a l'Energie Atomique (France)


Published in SPIE Proceedings Vol. 0393:
Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II
Phillip D. Blais, Editor(s)

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