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Proceedings Paper

Submicron Electron Beam And Optical Lithography Using A Tri-Level Resist Scheme
Author(s): F Buiguez; P. Parrens; B. Picard
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Paper Abstract

This paper describes the application of the tri-level resist system for both optical and electron beam lithographies, in order to improve the resolution.

Paper Details

Date Published: 7 November 1983
PDF: 6 pages
Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); doi: 10.1117/12.935110
Show Author Affiliations
F Buiguez, LETI Commissariat a l'Energie Atomique (France)
P. Parrens, LETI Commissariat a l'Energie Atomique (France)
B. Picard, LETI Commissariat a l'Energie Atomique (France)


Published in SPIE Proceedings Vol. 0393:
Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II
Phillip D. Blais, Editor(s)

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