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Proceedings Paper

Maskless Fabrication Using Focused Ion Beams
Author(s): Kenji Gamo; Susumu Namba
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Paper Abstract

Maskless patterning of materials using focused ion beams are important to simplify device processing and to develope full maskless processing. We have shown that a high speed maskless patterning can be done using ion beam assisted etching and ion beam modification techniques. In this paper, basic characteristics of various liquid metal alloy ion sources and a mass separatted focused ion beam system, and maskless patterning techniques for GaAs, Cr films and other materials are reported.

Paper Details

Date Published: 7 November 1983
PDF: 8 pages
Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); doi: 10.1117/12.935107
Show Author Affiliations
Kenji Gamo, Osaka University (Japan)
Susumu Namba, Osaka University (Japan)


Published in SPIE Proceedings Vol. 0393:
Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II
Phillip D. Blais, Editor(s)

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