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Proceedings Paper

A Focused Ion Beam System For The Generation Of Submicron Patterns
Author(s): J. A. Doherty; M. F. Steyer
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Paper Abstract

Focused ion beams constitute an important emerging technology that has many significant advantages for the fabrication of submicron ICs. These advantages are described vis-a-vis the currently dominant methods of pattern generation and transfer. A commercial focused ion beam system is outlined in the context of major design considerations. Probable FIB applications are also discussed.

Paper Details

Date Published: 7 November 1983
PDF: 16 pages
Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); doi: 10.1117/12.935106
Show Author Affiliations
J. A. Doherty, Ion Beam Technologies (United States)
M. F. Steyer, Ion Beam Technologies (United States)


Published in SPIE Proceedings Vol. 0393:
Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II
Phillip D. Blais, Editor(s)

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