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Proceedings Paper

Submicron X-Ray Replication Technology For Early Application
Author(s): C. R. Fencil; G. P. Hughes
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Paper Abstract

First-generation, full-wafer exposure, X-ray lithography equipment has been in continuous operation since 1979 in a pilot line application.(1,2,3) Second-generation, full-wafer exposure systems that incorporate the latest advancements in X-ray lithography are now being developed for early, submicron, VLSI patterning. This paper discusses recent advances in E-beam gun design and high-speed rotating anode development in terms of X-ray lithographic performances such as resolution and image contrast. In addition, the performance of a physical optics alignment technique that is compatible with submicron IC pattern overlay requirements is reported. The Perkin-Elmer X-100 full-wafer exposure system is a valuable development tool because of its flexibility. It is compatible with all X-ray masks and resists and can be used to expose either 75 mm or 100 mm diameter wafers.

Paper Details

Date Published: 7 November 1983
PDF: 6 pages
Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); doi: 10.1117/12.935098
Show Author Affiliations
C. R. Fencil, The Perkin-Elmer Corporation (United States)
G. P. Hughes, The Perkin-Elmer Corporation (United States)


Published in SPIE Proceedings Vol. 0393:
Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II
Phillip D. Blais, Editor(s)

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