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Proceedings Paper

Theoretical Model For Photoelectron Transport In X-Ray Lithography Systems
Author(s): J. C. Garth
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Paper Abstract

We have developed a theoretical model for calculating the dose received by a resist behind an x-ray absorbing mask in an x-ray lithography system. The model enables the dose-depth profile due to photoelectrons entering the resist from the mask to be predicted as a function of x-ray target material, excitation voltage, mask material and thickness, and chemical composition of the resist. As an application, we have calculated the dose profile in the resist PBS next to a Au mask irradiated by x-rays from Ag and Al targets operated at 10 kilovolt beam voltage. The characteristic line and continuum spectrum from the targets are computed, the absorption by the Au mask obtained, and an approximate photoelectron and Auger electron spectrum in the gold and PBS is evaluated. The dose-depth curve next to the gold-resist interface is found using the analytic electron transport model developed by Burke and Garth (1979). The calculations show that the dose profiles obtained using bremsstrahlung-produced electrons extend deeper than profiles than are computed from characteristic photon radiation alone. At 10 kV, this effect is found to be much greater for Ag than for Al.

Paper Details

Date Published: 7 November 1983
PDF: 9 pages
Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); doi: 10.1117/12.935097
Show Author Affiliations
J. C. Garth, Rome Air Development Center (United States)

Published in SPIE Proceedings Vol. 0393:
Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II
Phillip D. Blais, Editor(s)

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