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Proceedings Paper

Submicron Lithography Radiation Damage In Silicon And Gallium Arsenide ICs
Author(s): D. Howard Phillips
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Paper Abstract

This paper presents data comparing the radiation hardness of silicon and GaAs devices. Data presented in conjunction with this paper suggest that, when state-of-the-art electron-beam lithography is used to fabricate devices, GaAs offers a radiation-hardness advantage for certain specialty applications, including radiation-hardened spacecraft electronics.

Paper Details

Date Published: 7 November 1983
PDF: 8 pages
Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); doi: 10.1117/12.935096
Show Author Affiliations
D. Howard Phillips, The Aerospace Corporation (United States)


Published in SPIE Proceedings Vol. 0393:
Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II
Phillip D. Blais, Editor(s)

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