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Proceedings Paper

Options And Oportunities With Inorganic Photoresist Systems
Author(s): S. A. Lis; J. M . Lavine; G. M . Goldberg; J. I. Masters
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Paper Abstract

The submicron lithographic capability of several compositions of GeSe have been most conclusively shown by Tai and his co-workers.1 Others2,3,4 have shown that As2S3 and some of the other chalcogenides exhibit similar potential. In this paper we shall report on an extensive investigation of As2S3,.As2Se3 and GeSe2 used in conjunction with a variety of Ag-bearing materials such as evaporated Ag, Ag2S, Ag2Se and Ag2Te as well as with chemically applied Ag-bearing layers. We shall describe both wet and dry processing tech-niques used with these materials. We shall assess the submicron lithographic capabilities, processing latitudes and results obtained with the matrix combinations of these materials and show our experimental results.

Paper Details

Date Published: 7 November 1983
PDF: 7 pages
Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); doi: 10.1117/12.935091
Show Author Affiliations
S. A. Lis, GCA Corporation (United States)
J. M . Lavine, GCA Corporation (United States)
G. M . Goldberg, GCA Corporation (United States)
J. I. Masters, GCA Corporation (United States)


Published in SPIE Proceedings Vol. 0393:
Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II
Phillip D. Blais, Editor(s)

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