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Proceedings Paper

Electron Beam Exposure Of GeSex
Author(s): K. J. Polasko; R. F. W. Pease
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Paper Abstract

Electron beam writing of fine features usually requires correction of proximity effects to achieve accurate edge placement. One scheme to reduce proximity effects is to increase the accelerating voltage (> 40 keV) [1]. We have chosen to look the other way, at low energy (< 5 keV) electron beam exposure. Retarding field electron optics enables one to form fine beams of low energy electrons. The inorganic resist system Ag2Se/GeSex is well suited for low energy electron beam exposure due to its thin active region and conductive top layer. We report here on the effects of reducing the landing energy of the exposing electrons both in terms of sensitivity and proximity effects. Also we report on the absence of any edge sharpening effects for electron beam exposure and the effect of exposure rate on the required dose.

Paper Details

Date Published: 7 November 1983
PDF: 7 pages
Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); doi: 10.1117/12.935090
Show Author Affiliations
K. J. Polasko, Stanford University (United States)
R. F. W. Pease, Stanford University (United States)


Published in SPIE Proceedings Vol. 0393:
Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II
Phillip D. Blais, Editor(s)

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