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Proceedings Paper

Solid State Electron Beam Chemistry
Author(s): J. Pacansky
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Paper Abstract

A brief account is presented on an approach for a quantitative understanding of solid state electron beam chemistry that is directed towards understanding the radiation sensitivity of electron beam resists. Results obtained by irradiating PVA with and without additives, using a 25 kV electron beam, are shown in order to investigate the possible spherical and chemical mechanisms induced by the electron beam.

Paper Details

Date Published: 7 November 1983
PDF: 7 pages
Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); doi: 10.1117/12.935089
Show Author Affiliations
J. Pacansky, IBM Research Laboratory (United States)


Published in SPIE Proceedings Vol. 0393:
Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II
Phillip D. Blais, Editor(s)

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