The exposure characteristics of various electron resists are dependent upon the synchrotron acceleration energy (0.4-1.0 GeV). At higher acceleration energies, the exposure time necessary to develop the whole resist layer becomes shorter, and resist' -value increases. The order of resist sensitivities subjected to synchrotron X-ray (1 GeV) remains the same as that subjected to electron beam. Due to high collimation in synchrotron X-ray, high aspect-ratio (0.2-0.5 μm wide and 3 μm thick) resist patterns can easily be replicated with a larger clearance between mask and wafer. N-MOS transistors were fabricated employing a 4-level X-ray lithography process. The difference between the threshold voltages for transistors fabricated using X-ray and optical lithographies is in the error range between wafers.

Date Published: 7 November 1983
PDF: 6 pages
Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); doi: 10.1117/12.935087

Published in SPIE Proceedings Vol. 0393:
Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II
Phillip D. Blais, Editor(s)