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Proceedings Paper

Exposure Characteristics Of Electron Beam Resists For Synchrotron X-Ray Lithography
Author(s): Takeshi Kimura; Kozo Mochiji; Norikazu Tsumita; Hidehito Obayashi; Akira Mikuni
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Paper Abstract

The exposure characteristics of various electron resists are dependent upon the synchrotron acceleration energy (0.4-1.0 GeV). At higher acceleration energies, the exposure time necessary to develop the whole resist layer becomes shorter, and resist' -value increases. The order of resist sensitivities subjected to synchrotron X-ray (1 GeV) remains the same as that subjected to electron beam. Due to high collimation in synchrotron X-ray, high aspect-ratio (0.2-0.5 μm wide and 3 μm thick) resist patterns can easily be replicated with a larger clearance between mask and wafer. N-MOS transistors were fabricated employing a 4-level X-ray lithography process. The difference between the threshold voltages for transistors fabricated using X-ray and optical lithographies is in the error range between wafers.

Paper Details

Date Published: 7 November 1983
PDF: 6 pages
Proc. SPIE 0393, Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II, (7 November 1983); doi: 10.1117/12.935087
Show Author Affiliations
Takeshi Kimura, Hitachi Ltd (Japan)
Kozo Mochiji, Hitachi Ltd (Japan)
Norikazu Tsumita, Hitachi Ltd (Japan)
Hidehito Obayashi, Hitachi Ltd (Japan)
Akira Mikuni, University of Tokyo (Japan)


Published in SPIE Proceedings Vol. 0393:
Electron-Beam, X-Ray and Ion-Beam Techniques for Submicron Lithographies II
Phillip D. Blais, Editor(s)

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