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Proceedings Paper

Epitaxial Processes For Multilayer Electronic Device Structures
Author(s): P. Daniel Dapkus
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Paper Abstract

A review of materials technologies for the growth of multilayer device structures is given. It is concluded that new device structures employing ultrathin layers and abrupt interfaces will be grown by metalorganic chemical vapor deposition (MOCVD) or by molecular beam epitaxy (MBE).

Paper Details

Date Published: 8 November 1983
PDF: 10 pages
Proc. SPIE 0387, Technology of Stratified Media, (8 November 1983); doi: 10.1117/12.934988
Show Author Affiliations
P. Daniel Dapkus, University of Southern California (United States)

Published in SPIE Proceedings Vol. 0387:
Technology of Stratified Media
Roy F. Potter, Editor(s)

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