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Proceedings Paper

Deposited Dielectrics For III-V Semiconducting Devices
Author(s): Larry G. Meiners
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Paper Abstract

Options for coating III-V semiconducting material with insulating layers are discussed with regard to the physical and electrical properties of the deposited layers. Emphasis is on those techniques which minimize charging effects in the interfacial layers. Results on gallium arsenide, indium phosphide, indium arsenide, indium antimonide and indium gallium arsenide are discussed.

Paper Details

Date Published: 8 November 1983
PDF: 11 pages
Proc. SPIE 0387, Technology of Stratified Media, (8 November 1983); doi: 10.1117/12.934986
Show Author Affiliations
Larry G. Meiners, University of California (United States)


Published in SPIE Proceedings Vol. 0387:
Technology of Stratified Media
Roy F. Potter, Editor(s)

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