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Proceedings Paper

Laser Chemical Etching Method For Drilling Vias In GaAs
Author(s): Armin W. Tucker; Milton Birnbaum
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Paper Abstract

Rapid drilling of vias in thick wafers (381 µm) of GaAs has been achieved by a laser assisted etching process. The technique utilized a CW visible argon ion laser and an etchant gas of low pressure C12. Data on the dependence of the etch rate on the laser power, wavelength and C12 gas pressure are presented.

Paper Details

Date Published: 9 August 1983
PDF: 10 pages
Proc. SPIE 0385, Laser Processing of Semiconductor Devices, (9 August 1983); doi: 10.1117/12.934967
Show Author Affiliations
Armin W. Tucker, The Aerospace Corporation (United States)
Milton Birnbaum, The Aerospace Corporation (United States)

Published in SPIE Proceedings Vol. 0385:
Laser Processing of Semiconductor Devices
Charles C. Tang, Editor(s)

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