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Proceedings Paper

Electronic Properties Of Grain Boundaries In Polycrystalline Silicon
Author(s): E. S. Yang; E. Poon; H. L. Evans; W. Hwang; J. S. Song; C. M. Wu
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Paper Abstract

The electrical characteristics of grain boundaries in polycrystalline silicon have been investigated. Experiments were performed using a focused laser beam to measure the GB parameters. Theoretical models of phonon-assisted and charge scattering processes are presented in relation to attenuation of the thermionic emission. The results indicate that the GB states behave as extrinsic impurity states which are not sensitive to the misorientation angle between grains. Both majority and minority carrier behavior are described.

Paper Details

Date Published: 9 August 1983
PDF: 6 pages
Proc. SPIE 0385, Laser Processing of Semiconductor Devices, (9 August 1983); doi: 10.1117/12.934955
Show Author Affiliations
E. S. Yang, Columbia University (United States)
E. Poon, Columbia University (United States)
H. L. Evans, Columbia University (United States)
W. Hwang, Columbia University (United States)
J. S. Song, Columbia University (United States)
C. M. Wu, Columbia University (United States)


Published in SPIE Proceedings Vol. 0385:
Laser Processing of Semiconductor Devices
Charles C. Tang, Editor(s)

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