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Proceedings Paper

Conduction Processes In Polysilicon: Effects Of Laser Restructuring
Author(s): A. N. Khondker; R. R. Shah; D. M. Kim
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Paper Abstract

3-D integration of semiconductor devices will ultimately be realized via the use of laser or electron beam processed polysilicon. Although it is desirable to generate single crystal regions from polycrystalline silicon deposited in appropriate locations on a device structure during the course of device fabrication, that may not always be feasible for various reasons. It is, therefore, absolutely imperative to understand the performance of devices fabricated in either very large grain polysilicon or in near single crystal material containing defects and grain boundaries. In order to model devices fabricated in polysilicon with arbitrary grain size and trap density distribution, we have developed a conceptually novel approach to describe conduction in polysilicon. This methodology has been used to investigate the effects of laser restructuring of polysilicon.

Paper Details

Date Published: 9 August 1983
PDF: 9 pages
Proc. SPIE 0385, Laser Processing of Semiconductor Devices, (9 August 1983); doi: 10.1117/12.934953
Show Author Affiliations
A. N. Khondker, Rice University (United States)
R. R. Shah, Texas Instruments (United States)
D. M. Kim, Rice University (United States)


Published in SPIE Proceedings Vol. 0385:
Laser Processing of Semiconductor Devices
Charles C. Tang, Editor(s)

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