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Proceedings Paper

Laser Activated Flow For Integrated Circuit Fabrication
Author(s): M. Delfino
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Paper Abstract

A method of planarizing integrated circuit devices which is compatible with VLSI requirements is presented. This method utilizes either cw or pulsed radiation from a tunable CO2 laser to selectively heat, for example, a thin layer of phosphosilicate glass causing it to flow. Flow, which is characterized as a decrease in glass viscosity sufficient to provide smoothing of the device topography, occurs without adversely affecting the under-lying or exposed device materials. Application of the laser activated flow method to the fabrication of integrated circuits with multilevel metallization systems is demonstrated.

Paper Details

Date Published: 9 August 1983
PDF: 6 pages
Proc. SPIE 0385, Laser Processing of Semiconductor Devices, (9 August 1983); doi: 10.1117/12.934945
Show Author Affiliations
M. Delfino, Fairchild Advanced Research and Development Laboratory (United States)

Published in SPIE Proceedings Vol. 0385:
Laser Processing of Semiconductor Devices
Charles C. Tang, Editor(s)

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