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Proceedings Paper

Novel Laser Scanning Techniques For Si-On-Insulator Devices
Author(s): L. E. Trimble; G. K. Celler
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Paper Abstract

Recent developments are reported for the conversion of polysilicon layers on SiO2 into device-worthy, large grain or single crystalline Si-on-Insulator material, using a cw Ar laser. The advantages of beam shaping and of oscillation of the growth front are shown. Finally, the utility of rapid laser scanning (1-10 m/sec) is reported, and the practical limitatibns of this technique are defined.

Paper Details

Date Published: 9 August 1983
PDF: 8 pages
Proc. SPIE 0385, Laser Processing of Semiconductor Devices, (9 August 1983); doi: 10.1117/12.934938
Show Author Affiliations
L. E. Trimble, Bell Laboratories (United States)
G. K. Celler, Bell Laboratories (United States)


Published in SPIE Proceedings Vol. 0385:
Laser Processing of Semiconductor Devices
Charles C. Tang, Editor(s)

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