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Proceedings Paper

Dependence Of The Diffraction Efficiency Of Bi12SiO[sub]20[/sub] On Recording Parameters
Author(s): J. D. Gaskill; P. Lam; J. C. Wyant
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Paper Abstract

The dependence of the diffraction efficiency and hologram writing rate of Bi12Si020 crystals on bias voltage and write-beam irradiance was investigated. The diffraction efficiency was found to increase with increasing bias voltage, but displayed very little dependence on write-beam irradiance for bias voltages of 5 kV or less. The hologram writing rate was found to increase with increasing bias voltage and increasing write-beam irradiance.

Paper Details

Date Published: 13 December 1983
PDF: 7 pages
Proc. SPIE 0370, Holographic Data Nondestructive Testing, (13 December 1983); doi: 10.1117/12.934893
Show Author Affiliations
J. D. Gaskill, University of Arizona (United States)
P. Lam, University of Arizona (United States)
J. C. Wyant, University of Arizona (United States)


Published in SPIE Proceedings Vol. 0370:
Holographic Data Nondestructive Testing
Dalibor Vukicevic, Editor(s)

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