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Proceedings Paper

Ultraviolet (UV) Photochemical Doping Of Silicon
Author(s): K. G. Ibbs; M. L. Lloyd; R. J. Chad
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Paper Abstract

This paper describes a method of producing p-n junctions in silicon using an ArF laser to dissociate triethyl boron. Junction depths of 0→0.8 μm and peak electrically active dopant concentrations of 8 x 1018 → 2 x 1020 have been measured.

Paper Details

Date Published: 16 June 1983
PDF: 5 pages
Proc. SPIE 0369, Max Born Centenary Conf, (16 June 1983); doi: 10.1117/12.934394
Show Author Affiliations
K. G. Ibbs, The General Electric Company, p.l.c. (England)
M. L. Lloyd, The General Electric Company, p.l.c. (England)
R. J. Chad, The General Electric Company, p.l.c. (England)


Published in SPIE Proceedings Vol. 0369:
Max Born Centenary Conf
M. John Colles; D. William Swift, Editor(s)

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