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Proceedings Paper

Advances In The Infrared Microscopy Of Electronic Materials
Author(s): Charles R. Elliott; John C. Regnault; Beverley T. Meggitt
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Paper Abstract

Crystalline semiconductor materials often contain structural defects which can influence adversely both the behaviour during processing and the ultimate performance of devices fabricated from them. Traditionally structural perfections have been assessed by the optical microscopy of chemically etched surfaces and augmented by X-ray and electron microscopic techniques when detailed analyses are required. Polarised infrared microscopy (PIM) is emerging as a non-destructive technique for the real time imaging of defects ranging in size from locally strained regions several millimetres across, down to single dislocations. This paper discusses the present state of PIM development, with examples taken principally from the field of opto-electronic materials. The performance of a polarizing microscope operating at near-infrared wavelengths is described for three distinctive imaging modes. In these modes, defects which absorb the illumination or cause stress birefringence or non-radiative carrier recombination in photoluminscent materials respectively are revealed with an optimum resolution of about 1 μm.

Paper Details

Date Published: 29 March 1983
PDF: 8 pages
Proc. SPIE 0368, Microscopy: Techniques and Capabilities, (29 March 1983); doi: 10.1117/12.934332
Show Author Affiliations
Charles R. Elliott, British Telecom Research Laboratories (England)
John C. Regnault, British Telecom Research Laboratories (England)
Beverley T. Meggitt, Sira Ltd. (England)


Published in SPIE Proceedings Vol. 0368:
Microscopy: Techniques and Capabilities
Lionel R. Baker, Editor(s)

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