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Proceedings Paper

Application Of Optical Microscopy To Dimensional Measurements In Microelectronics
Author(s): M. J. Downs; N. P. Turner
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Paper Abstract

The problems of making accurate measurements of critical dimensions of features on integrated photomasks and silicon wafers are discussed and the currently employed optical measurement techniques described. Sources of systematic uncertainty in such measurements are considered. Measurement equipment developed at NPL and the NPL Photomask Linewidth Standard are described, and approaches to profile measurement of features on silicon wafers are discussed.

Paper Details

Date Published: 29 March 1983
PDF: 6 pages
Proc. SPIE 0368, Microscopy: Techniques and Capabilities, (29 March 1983); doi: 10.1117/12.934330
Show Author Affiliations
M. J. Downs, National Physical Laboratory (England)
N. P. Turner, National Physical Laboratory (England)


Published in SPIE Proceedings Vol. 0368:
Microscopy: Techniques and Capabilities
Lionel R. Baker, Editor(s)

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