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Proceedings Paper

Determination Of Al In Ga1-xAlxAs By Auger Spectroscopy Ion Microprobe Analysis And Photoluminescence
Author(s): T. S. Stewart; S. I. Boldish; J. A. Osmer; N. Marquez; D. G. Heflinger; G. A. Evans; J. B. Kirk; A. Ceruzzi; A. Mantie; T. Stockton
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Paper Abstract

Single layers of Ga1-xAlxAs were grown on semi-insulating Cr-doped GaAs substrates by liquid phase epitaxy. The samples consisted of six series. Within each series, the mole fraction of Al ranged from 0 to 0.45. Each series was either doped p with Ge or n with Te. The doping levels ranged from 1015 to 1019 carriers/cm3. The mole fraction of Al in each sample was measured independently by Auger electron spectroscopy, ion microprobe mass analysis, and photoluminescence for comparison with phase diagram predictions. The carrier concentrations were estimated by the half-width of the photoluminescence peaks. The techniques, their discrepancies, and agreements are discussed.

Paper Details

Date Published: 15 September 1982
PDF: 10 pages
Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); doi: 10.1117/12.934292
Show Author Affiliations
T. S. Stewart, Hewlett-Packard (United States)
S. I. Boldish, The Aerospace Corporation (United States)
J. A. Osmer, The Aerospace Corporation (United States)
N. Marquez, The Aerospace Corporation (United States)
D. G. Heflinger, The Aerospace Corporation (United States)
G. A. Evans, TRW Systems and Energy (United States)
J. B. Kirk, TRW Systems and Energy (United States)
A. Ceruzzi, Laser Diode Laboratories (United States)
A. Mantie, Laser Diode Laboratories (United States)
T. Stockton, Laser Diode Laboratories (United States)


Published in SPIE Proceedings Vol. 0323:
Semiconductor Growth Technology
Esther Krikorian, Editor(s)

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